Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch: Difference between revisions
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<gallery caption="Recipe no. 10: C06445_02 coil_2500W, platen:300W, He/C4F8= 17.5, C4F8/H2=1, Pressure:8.8mTorr, C4F8:25.6sccm, He:448.7sccm, H2:25.6sccm, 3:56 min " perrow="4"> | <gallery caption="Recipe name: SiO2_res_10 Recipe no. 10: C06445_02 coil_2500W, platen:300W, He/C4F8= 17.5, C4F8/H2=1, Pressure:8.8mTorr, C4F8:25.6sccm, He:448.7sccm, H2:25.6sccm, 3:56 min " perrow="4"> | ||
Image:C06445_02_11.jpg|0.4µ/0.2µ<br> Bad lithography | Image:C06445_02_11.jpg|0.4µ/0.2µ<br> Bad lithography |
Revision as of 08:36, 5 February 2021
SiO2 Etch
I am in the process of doing some development of a SiO2 etch. So far I have found this fairly good recipe. For now it is the standard SiO2 etch recipes but I might change the "Standard recipe" a a later time if I find a better one. You are welcome to contact me see more result. I will add them to Labadviser at a later time. /Berit Herstrøm bghe@dtu.dk (Nanolab)
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0.4µ/0.2µ
Bad lithography -
0.5/0.25µ
Etch depth: 652 nm
Resist left: 456 nm -
1µ/0.5µ:
Etch depth: 855 nm
Resist left: 487 nm -
2µ/1µ:
Etch depth: 952 nm
Resist left: 487 nm -
4µ/2µ:
Etch depth: 1106 nm
Resist left: 487 nm -
0.8µ/0.2µ
Etch depth: 867 nm
Resist left: 426 nm -
1.0µ/0.25µ:
Etch depth: 893 nm
Resist left: 460 nm -
4µ/1µ:
Etch depth: 1033 nm
Resist left: 473 nm