Specific Process Knowledge/Thermal Process/RTP Jipelec 2: Difference between revisions

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[[Category: Equipment |Thermal Jipelec]]
[[Category: Equipment |Thermal Jipelec]]

Revision as of 17:07, 15 January 2021

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Jipelec - Rapid Thermal Processing

Jipelec RTP: Positioned in cleanroom A-4

The Jipelec is a rapid thermal processing (RTP) oven. It is be used for fast and well-controlled annealing or alloying of samples. It is possible to use either a thermocouple or a pyrometer to control the temperature (of the sample carrier).


The user manual, technical information and contact information can be found in LabManager:

Jipelec RTP

Overview of the performance of the Jipelec RTP and some process related parameters

Purpose RTP annealing
Process parameter range Process Temperature
  • 0-1100 oC
  • III-V materials only to 450 oC
  • Temperature ramp up to 300 oC/min
Process pressure
  • 1 atm
  • Vacuum
Gases on the system
  • N2
Substrates Batch size
  • One 50 mm or 100 mm wafer
  • Small samples (placed on a carbide carrier or a Si carrier wafer with 1 µm oxide)
Substrate materials allowed

A carrier is always needed: For III-V materials a carbide carrier is used, and for other samples a silicon carrier wafer with 1 µm oxide is used

  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Fused silica/quartz
  • Polysilicon
  • III-V materials (on graphite carrier, max 450 oC)
  • Some metals - Ask the Thin Film group for permission
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