Specific Process Knowledge/Thin film deposition: Difference between revisions
Line 2: | Line 2: | ||
=== Metals/elements === | === Metals/elements === | ||
{| border="1" cellspacing="0" cellpadding="7 | {| border="1" cellspacing="0" cellpadding="7" | ||
|- | |- | ||
| | | |
Revision as of 12:22, 24 October 2007
Choose material to deposit
Metals/elements
13 Al Aluminium | 14 Si Silicon | |||||
22 Ti Titanium | 24 Cr Chromium | 28 Ni Nickel | 29 Cu Copper | |||
46 Pd Palladium | 47 Ag Silver | 50 Sn Tin | ||||
73 Ta Tantalum | 74 W Tungsten | 78 Pt Platinum | 79 Au Gold |
Polymers
- SU8
- Antistiction coating
- Topas
- PMMA
Other materials
Choose deposition equipment
- Alcatel - E-beam evaporator and sputter tool
- Lesker - Sputter tool
- Leybold - E-beam evaporator and multiple wafer tool
- Wordentec - E-beam evaporator, sputter and thermical evaporator
- Hummer - Gold sputtering system
- PECVD - Plasma Enhanced Chemical Vapor deposition
- B2 Furnace LPCVD Nitride - Deposition of silicon nitrid
- B3 Furnace LPCVD TEOS - Deposition of silicon oxide
- B4 Furnace LPCVD PolySilicon - Deposition of polysilicon
- MVD - Molecular Vapor Deposition