Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2: Difference between revisions
No edit summary |
|||
| Line 35: | Line 35: | ||
|} | |} | ||
|ItemComment=OnlySF6 and O2 are used for Si, PR, and Cr etch. The rest is only make-up | |ItemComment=OnlySF6 and O2 are used for Si, PR, and Cr etch. The rest is only make-up | ||
}} | {| | A | B|- | C| D|}}} | ||
|} | |} | ||
Revision as of 09:59, 14 December 2020
Feedback to this page: click here
This system is a research tool and not available to the users
If you want to get access to the tool, then talk to professor Henry Jansen
Current setup and rules on Pegasus 2
Click here to access older configurations.
The current configuration is
| Item | The currently applied modification | Comments |
|---|---|---|
| Available gasses and gas chemistry | { | OnlySF6 and O2 are used for Si, PR, and Cr etch. The rest is only make-up
{ |
Access to Pegasus 2 configuration templates
Pegasus 2 configuration table version 1
- Table header: Template:Peg2configheader1
- Table content: Template:Peg2configcontent1