Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2: Difference between revisions
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{{Template:Peg2configheader1 | {{Template:Peg2configheader1 | ||
|TableHeader= valid from November 2020 | |TableHeader= Currently valid from November 2020 onwards | ||
}} | }} | ||
{{Template:Peg2configcontent1 | {{Template:Peg2configcontent1 | ||
|ItemName= Available gasses and gas chemistry | |ItemName= Available gasses and gas chemistry | ||
|ItemConfiguration= | |ItemConfiguration= | ||
{| C<sub>4</sub>F<sub>8</sub> (H2 currently fitted but closed) : 0 sccm | |||
| SF6: 50 sccm | |||
| O2: 50 sccm | |||
|- | |||
| Ar: 283 sccm | |||
| N2: 500 sccm | |||
| He: 11 sccm | |||
|- | |||
| CO2: (It is not in the software) | |||
| | |||
| | |||
|} | |||
|ItemComment=OnlySF6 and O2 are used for Si, PR, and Cr etch. The rest is only make-up | |ItemComment=OnlySF6 and O2 are used for Si, PR, and Cr etch. The rest is only make-up | ||
}} | }} | ||