Specific Process Knowledge/Etch/OES: Difference between revisions
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== Optical Emission Spectroscopy == | == Optical Emission Spectroscopy == | ||
As an example, let's take the etching of silicon by fluorine in one of the dry etchers. The fluorine is supplied to the system as SF<sub>6</sub> gas. The gas is fed to the process chamber using mass flow controllers. Driven by the RF generators (both coil and platen) the plasma will decompose the gas in a series of dissociation and ionisation | As an example, let's take the etching of silicon by fluorine in one of the dry etchers. The fluorine is supplied to the system as SF<sub>6</sub> gas. The gas is fed to the process chamber using mass flow controllers. Driven by the RF generators (both coil and platen) the plasma will decompose the gas in a series of dissociation and ionisation reactions to form fluorine radicals F<sup>*</sup>. In the areas on the wafer that are not covered by a mask, the exposed silicon atoms will be attacked aggressively by the fluorine to form volatile SiF that | ||
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