Specific Process Knowledge/Etch: Difference between revisions
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*[[/DRIE-Pegasus| DRIE-Pegasus systems]] | *[[/DRIE-Pegasus| DRIE-Pegasus systems]] | ||
**[[/DRIE-Pegasus/Pegasus-1| DRIE-Pegasus 1 (Si etching on 4" wafers)]] | **[[/DRIE-Pegasus/Pegasus-1| DRIE-Pegasus 1 (Si etching on 4" wafers)]] | ||
**[[/DRIE-Pegasus/Pegasus-2| DRIE-Pegasus 2 ( | **[[/DRIE-Pegasus/Pegasus-2| DRIE-Pegasus 2 (Dedicated for research applications)]] | ||
**[[/DRIE-Pegasus/Pegasus-3| DRIE-Pegasus 3 (Si etching on 150 mm wafers)]] | **[[/DRIE-Pegasus/Pegasus-3| DRIE-Pegasus 3 (Si etching on 150 mm wafers)]] | ||
**[[/DRIE-Pegasus/Pegasus-4| DRIE-Pegasus 4 (Etching of silicon based dielectrics on 150 mm wafers)]] | **[[/DRIE-Pegasus/Pegasus-4| DRIE-Pegasus 4 (Etching of silicon based dielectrics on 150 mm wafers)]] | ||
*[[/ICP Metal Etcher|ICP Metal Etch]] | *[[/ICP Metal Etcher|ICP Metal Etch]] | ||
*[[/III-V ICP|III-V ICP]] | *[[/III-V ICP|III-V ICP]] | ||