Specific Process Knowledge/Etch/DRIE-Pegasus: Difference between revisions
| Line 57: | Line 57: | ||
|- | |- | ||
!style="background:silver; color:black;" align="center" valign="center" width="100" rowspan="2"|Purpose | !style="background:silver; color:black;" align="center" valign="center" width="100" rowspan="2"|Purpose | ||
|style="background:Whitesmoke; color:black" width="80 | Primary | |style="background:Whitesmoke; color:black" width="80" | Primary | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* Dry etching of 4" silicon | * Dry etching of 4" silicon | ||