Specific Process Knowledge/Thin film deposition/Lesker: Difference between revisions
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The "From SiO<math>_2</math> target (RF sputter)" study was done on clean Si substrates. The sputter power was 157W and the pressure 3.5 mTorr using RF sputtering of a SiO<math>_2</math> target. The film thicknesses were around 42 nm. | The "From SiO<math>_2</math> target (RF sputter)" study was done on clean Si substrates. The sputter power was 157W and the pressure 3.5 mTorr using RF sputtering of a SiO<math>_2</math> target. The film thicknesses were around 42 nm. | ||
The "From Si target (DC sputter)" study was done on clean Si substrates. The sputter pressure 3 mTorr using DC reactive sputtering of a Si target. Oxygen was added to the argon sputter gas. Above 10% O<math>_2</math> the gun seems to oxidize (at this sputter power). | The "From Si target (DC sputter)" study was done on clean Si substrates. The sputter pressure 3 mTorr using DC reactive sputtering of a Si target. Oxygen was added to the argon sputter gas. Above 10% O<math>_2</math> the gun seems to oxidize (at this sputter power). Figure 1 shows the difference in AFM images between no RF bias (wafer 12) and RF bias (Wafer 21). | ||
The "Ta" study was done on clean Si substrates. The sputter pressure was 3 mTorr using DC sputtering of a Ta target. Some O<math>_2</math> was added to wafer 25 and 26 to make Ta<math>_2</math>O<math>_5</math>. In order to get fully oxidized films, up to 30-45% O<math>_2</math> should be added. Consult the thesis of Carsten Christensen for details on Ta<math>_2</math>O<math>_5</math>. | The "Ta" study was done on clean Si substrates. The sputter pressure was 3 mTorr using DC sputtering of a Ta target. Some O<math>_2</math> was added to wafer 25 and 26 to make Ta<math>_2</math>O<math>_5</math>. In order to get fully oxidized films, up to 30-45% O<math>_2</math> should be added. Consult the thesis of Carsten Christensen for details on Ta<math>_2</math>O<math>_5</math>. | ||