Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/Black silicon on Demand: Difference between revisions
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Silicon wafers are prepared with 1.5 μm thick resist patterns (AZ MIR 701 DUV resist from MicroChemicals) and exposed using a maskless aligner (MLA150, Heidelberg) to create patterns above 400 nm. Below are some SEM images of BSi nanostructures achieved by the modified CORE process: | Silicon wafers are prepared with 1.5 μm thick resist patterns (AZ MIR 701 DUV resist from MicroChemicals) and exposed using a maskless aligner (MLA150, Heidelberg) to create patterns above 400 nm. Below are some SEM images of BSi nanostructures achieved by the modified CORE process: | ||
<gallery caption="" widths="360px" heights=" | <gallery caption="" widths="360px" heights="300px" perrow="2"> | ||
File:BSi free.png|''''' 1 µm silicon pillars etched with a BSi-free recipe''''' | File:BSi free.png|''''' 1 µm silicon pillars etched with a BSi-free recipe''''' | ||
File:BSi full.png|''''' 1 µm silicon pillars etched first with a BSi-free recipe and then continued with a BSi-full recipe''''' | File:BSi full.png|''''' 1 µm silicon pillars etched first with a BSi-free recipe and then continued with a BSi-full recipe''''' | ||