Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/Black silicon on Demand: Difference between revisions
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Silicon wafers are prepared with 1.5 μm thick resist patterns (AZ MIR 701 DUV resist from MicroChemicals) and exposed using a maskless aligner (MLA150, Heidelberg) to create patterns above 400 nm. Below are some SEM images of BSi nanostructures achieved by the modified CORE process: | Silicon wafers are prepared with 1.5 μm thick resist patterns (AZ MIR 701 DUV resist from MicroChemicals) and exposed using a maskless aligner (MLA150, Heidelberg) to create patterns above 400 nm. Below are some SEM images of BSi nanostructures achieved by the modified CORE process: | ||
<gallery caption="" widths="400px" heights="300px" | <gallery caption="" widths="400px" heights="300px" percol="2"> | ||
image:BSi free.png| 1. 3D silicon photonic crystal membranes. | image:BSi free.png| 1. 3D silicon photonic crystal membranes. | ||
image:BSi full.png| 2. Comparison of scallops by traditional Bosch process and modified DREM process. | image:BSi full.png| 2. Comparison of scallops by traditional Bosch process and modified DREM process. | ||