Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/Si Nano etching: Difference between revisions

@@ Line 19: / Line 19: @@
-[[File:Fig 13a.png|800px|center|thumb|'''''Submicron silicon trenches and lines derived from the fine-tuned CORE sequence.''''']]
+[[File:Fig 13a.png|800px|left|thumb|'''''Submicron silicon trenches and lines derived from the fine-tuned CORE sequence.''''']]
-'''''Submicron silicon trenches and lines derived from the fine-tuned CORE sequence.'''''
+[[File:Fig 13b.png|800px|left|thumb|'''''Submicron silicon holes derived from the fine-tuned CORE sequence. The side wall angle is ca. 2°.''''' ]]
-[[File:Fig 13b.png|800px]]
-'''''Submicron silicon holes derived from the fine-tuned CORE sequence. The side wall angle is ca. 2°.'''''
+[[File:Fig 13c.png|800px|left|thumb|'''''Submicron silicon pillars derived from the fine-tuned CORE sequence.''''' ]
-[[File:Fig 13c.png|800px]]
+[[File:Fig 13d - 1.png|800px|left|thumb|'''''Notch-free nanostructures in SOI material derived from the fine-tuned CORE sequence.(Left) Grating with 80 nm periodicity. (Right) RIE lag test structure between 30 and 100 nm.''''']]
-'''''Submicron silicon pillars derived from the fine-tuned CORE sequence.'''''
-[[File:Fig 13d - 1.png|800px]]
-'''''Notch-free nanostructures in SOI material derived from the fine-tuned CORE sequence.(Left) Grating with 80 nm periodicity. (Right) RIE lag test structure between 30 and 100 nm.'''''