Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/Si Nano etching: Difference between revisions
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[[File:CORE.png|800px]] | [[File:CORE.png|800px]] | ||
The CORE cycle design rules and optimized recipe for the etch rate fixed at 15 nm\ | The CORE cycle design rules and optimized recipe for the etch rate fixed at 15 nm\min | ||
'''Rule 1''': 2 min E-time needs 2 s O-time. Every 2 min extra E-time will need 1 s extra O-time until a maximum of 14 min E-time. | '''Rule 1''': 2 min E-time needs 2 s O-time. Every 2 min extra E-time will need 1 s extra O-time until a maximum of 14 min E-time. | ||
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[[File:Fig 13a.png|800px]] | [[File:Fig 13a.png|800px|thumb|'''''Submicron silicon trenches and lines derived from the fine-tuned CORE sequence.''''']] | ||
'''''Submicron silicon trenches and lines derived from the fine-tuned CORE sequence.''''' | '''''Submicron silicon trenches and lines derived from the fine-tuned CORE sequence.''''' | ||