Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/Si Nano etching: Difference between revisions
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[[File:Fig 13a.png|800px]] | [[File:Fig 13a.png|800px]] | ||
'''''Submicron silicon trenches and lines derived from the fine-tuned CORE sequence.''''' | '''''Submicron silicon trenches and lines derived from the fine-tuned CORE sequence.''''' | ||
[[File:Fig 13b.png|800px]] | [[File:Fig 13b.png|800px]] | ||
'''''Submicron silicon holes derived from the fine-tuned CORE sequence. The side wall angle is ca. 2°.''''' | '''''Submicron silicon holes derived from the fine-tuned CORE sequence. The side wall angle is ca. 2°.''''' | ||
[[File:Fig 13c.png|800px]] | [[File:Fig 13c.png|800px]] | ||