Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/Si Nano etching: Difference between revisions

@@ Line 19: / Line 19: @@
-[[File:Fig 13a.png|800px]] | '''''Submicron silicon trenches and lines derived from the fine-tuned CORE sequence.'''''
+[[File:Fig 13a.png|800px]]
+'''''Submicron silicon trenches and lines derived from the fine-tuned CORE sequence.'''''
-[[File:Fig 13b.png|800px]] | '''''Submicron silicon holes derived from the fine-tuned CORE sequence. The side wall angle is ca. 2°.'''''
+[[File:Fig 13b.png|800px]]
+'''''Submicron silicon holes derived from the fine-tuned CORE sequence. The side wall angle is ca. 2°.'''''
 [[File:Fig 13c.png|800px]]