Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/Si Nano etching: Difference between revisions
No edit summary |
No edit summary |
||
| Line 5: | Line 5: | ||
'''The CORE recipe is shown as below''' | '''The CORE recipe is shown as below''' | ||
[[File:CORE.png|800px | [[File:CORE.png|800px]] | ||
The CORE cycle design rules and optimized recipe for the etch rate fixed at 15 nm\min | The CORE cycle design rules and optimized recipe for the etch rate fixed at 15 nm\min | ||
| Line 15: | Line 15: | ||
'''Submicron silicon trenches and lines derived from the fine-tuned CORE sequence.''' ''Italic text'' | '''Submicron silicon trenches and lines derived from the fine-tuned CORE sequence.''' ''Italic text'' | ||
[[File:Fig 13a.png|800px | [[File:Fig 13a.png|800px]] | ||
'''Submicron silicon holes derived from the fine-tuned CORE sequence. The side wall angle is ca. 2°.''' ''Italic text'' | '''Submicron silicon holes derived from the fine-tuned CORE sequence. The side wall angle is ca. 2°.''' ''Italic text'' | ||