Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/Si Nano etching: Difference between revisions

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 '''The CORE recipe is shown as below'''
 [[File:CORE.png|800px|thumb|left]]
+The CORE cycle design rules and optimized recipe for the etch rate  fixed at 15 nm\min
+'''Rule 1''': 2 min E-time needs 2 s O-time. Every 2 min extra E-time will need 1 s extra O-time until a maximum of 14 min E-time.
+'''Rule 2''': Every second of O-time needs at least 3 s R-time (for 8 min E-time).
+'''Rule 3''': The undercut is roughly half of the gained etch depth per CORE cycle.
+Below are some SEM images of the silicon nanostructures achieved by the CORE process:
+'''Submicron silicon trenches and lines derived from the fine-tuned CORE sequence.''' ''Italic text''
+[[File:Fig 13a.png|800px|thumb|left]]
+'''Submicron silicon holes derived from the fine-tuned CORE sequence. The side wall angle is ca. 2°.''' ''Italic text''
+'''Submicron silicon pillars derived from the fine-tuned CORE sequence.''' ''Italic text''
+N'''otch-free nanostructures in SOI material derived from the fine-tuned CORE sequence Left) Grating with 80 nm periodicity. Right) RIE lag test structure between 30 and 100 nm.'''''Italic text''