Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride: Difference between revisions
→Comparison of the methods for deposition of AlN: Added sputter-system metal-nitride(PC3) |
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!Generel description | !Generel description | ||
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*Reactive Sputtering ( 2" Al target) | *Reactive Sputtering (2" Al target) | ||
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*Pulsed reactive sputtering | *Pulsed reactive DC sputtering (PDC, 4" Al target) | ||
*Reactive HIPIMS (high-power impulse magnetron sputtering) | *Reactive HIPIMS (high-power impulse magnetron sputtering) | ||
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!Stoichiometry | !Stoichiometry | ||
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* | *Oxygen contamination issue (in 2016 a user got ~ 30 % O in the AlN, measured by XPS in the bulk of the layer). | ||
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* | *Al:N:O ~ 53 : 46 : 1.5 in the bulk (see acceptance test results [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process information|here]]). It should be possible to tune the Al:N ratio somewhat. | ||
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*AlN | *AlN | ||
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!Film Thickness | !Film Thickness | ||
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* | * few nm - 200 nm | ||
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* | * few nm - ~ 1 μm | ||
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* 0nm - | * 0nm - 50 nm | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
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* Not tested | * Not tested | ||
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* | * at least 0.5 nm/s ([[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard recipe performance|see conditions]]) | ||
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* 0.0625 nm/cycle on a flat sample | * 0.0625 nm/cycle on a flat sample | ||
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!Step coverage | !Step coverage | ||
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* | *Good | ||
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* | *Not known, most likely medium-good | ||
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*Very good | *Very good | ||
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!Process Temperature | !Process Temperature | ||
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* Up to 400 | * Up to 400 °C | ||
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* | * Up to 600 °C | ||
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* 350 | * 350 °C | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
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* 1x 150 mm wafer | * 1x 150 mm wafer | ||
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* | * chips | ||
* 10 x 100 mm wafer or | |||
* 10 x 150 mm wafer | |||
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*Several small samples | *Several small samples | ||
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*Any metals | *Any metals | ||
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* | *Similar to the Sputter-System (Lesker), see [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 cross-contamination sheet] | ||
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*Silicon | *Silicon | ||
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Further process information can be found here: | Further process information can be found here: | ||
*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/AlN deposition using ALD2|AlN deposition using ALD2]] | *[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/AlN deposition using ALD2|AlN deposition using ALD2]] | ||
*For AlN deposition using the | *[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process information|Deposition conditions and acceptance test results]] for sputter deposition of AlN in the Sputter-System Metal-Nitride(PC3). | ||
*For further information on AlN deposition using the sputter systems please contact the Thin Film Group ([mailto:thinfilm@nanolab.dtu.dk thinfilm@nanolab.dtu.dk]). The Sputter-System Metal-Nitride(PC3) was acquired partly to make it possible to deposit high-quality of AlN films. | |||