Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride: Difference between revisions
→Comparison of the methods for deposition of AlN: Added sputter-system metal-nitride(PC3) |
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!Generel description | !Generel description | ||
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*Reactive Sputtering ( 2" Al target) | *Reactive Sputtering (2" Al target) | ||
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*Pulsed reactive sputtering | *Pulsed reactive DC sputtering (PDC, 4" Al target) | ||
*Reactive HIPIMS (high-power impulse magnetron sputtering) | *Reactive HIPIMS (high-power impulse magnetron sputtering) | ||
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!Stoichiometry | !Stoichiometry | ||
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* | *Oxygen contamination issue (in 2016 a user got ~ 30 % O in the AlN, measured by XPS in the bulk of the layer). | ||
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* | *Al:N:O ~ 53 : 46 : 1.5 in the bulk (see acceptance test results [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process information|here]]). It should be possible to tune the Al:N ratio somewhat. | ||
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*AlN | *AlN | ||
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!Film Thickness | !Film Thickness | ||
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* | * few nm - 200 nm | ||
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* | * few nm - ~ 1 μm | ||
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* 0nm - | * 0nm - 50 nm | ||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
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* Not tested | * Not tested | ||
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* | * at least 0.5 nm/s ([[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard recipe performance|see conditions]]) | ||
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* 0.0625 nm/cycle on a flat sample | * 0.0625 nm/cycle on a flat sample | ||
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!Step coverage | !Step coverage | ||
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* | *Good | ||
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* | *Not known, most likely medium-good | ||
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*Very good | *Very good | ||
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!Process Temperature | !Process Temperature | ||
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* Up to 400 | * Up to 400 °C | ||
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* | * Up to 600 °C | ||
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* 350 | * 350 °C | ||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
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* 1x 150 mm wafer | * 1x 150 mm wafer | ||
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* | * chips | ||
* 10 x 100 mm wafer or | |||
* 10 x 150 mm wafer | |||
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*Several small samples | *Several small samples | ||
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*Any metals | *Any metals | ||
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* | *Similar to the Sputter-System (Lesker), see [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 cross-contamination sheet] | ||
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*Silicon | *Silicon | ||
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Further process information can be found here: | Further process information can be found here: | ||
*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/AlN deposition using ALD2|AlN deposition using ALD2]] | *[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/AlN deposition using ALD2|AlN deposition using ALD2]] | ||
*For AlN deposition using the | *[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process information|Deposition conditions and acceptance test results]] for sputter deposition of AlN in the Sputter-System Metal-Nitride(PC3). | ||
*For further information on AlN deposition using the sputter systems please contact the Thin Film Group ([mailto:thinfilm@nanolab.dtu.dk thinfilm@nanolab.dtu.dk]). The Sputter-System Metal-Nitride(PC3) was acquired partly to make it possible to deposit high-quality of AlN films. |
Revision as of 09:07, 22 April 2020
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Deposition of Aluminium Nitride
AlN films can be deposited by sputtering or by atomic layer deposition (ALD).
In the sputter systems AlN can be either deposited by direct sputtering of an AlN target or reactive sputtering with an Al target in mixtures of argon and nitrogen.
Comparison of the methods for deposition of AlN
Sputter-System (Lesker) | Sputter-System Metal-Nitride(PC3) | ALD2 | |
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Generel description |
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Stoichiometry |
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Film Thickness |
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Deposition rate |
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Step coverage |
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Process Temperature |
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Substrate size |
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Allowed materials |
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Further process information can be found here:
- AlN deposition using ALD2
- Deposition conditions and acceptance test results for sputter deposition of AlN in the Sputter-System Metal-Nitride(PC3).
- For further information on AlN deposition using the sputter systems please contact the Thin Film Group (thinfilm@nanolab.dtu.dk). The Sputter-System Metal-Nitride(PC3) was acquired partly to make it possible to deposit high-quality of AlN films.