Specific Process Knowledge/Thin film deposition/Deposition of Chromium: Difference between revisions

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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker sputterer]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker sputterer]])
! Sputter deposition ([[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|(Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) ]])
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|E-beam and sputter deposition of Chromium
|E-beam and sputter deposition of Chromium
|E-beam deposition of Chromium
|E-beam deposition of Chromium
|Sputter deposition of Chromium
|Sputter deposition of Chromium
|Sputter deposition of Chromium
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|-
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|RF Ar clean
|RF Ar clean
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|RF Ar clean
|RF Ar clean
|RF Ar clean
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|10Å to 1µm*
|10Å to 1µm*
|10Å to 1000 Å
|10Å to 1000 Å
|at least up to 200 nm
|at least up to 200 nm
|at least up to 200 nm
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|-
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|10 Å/s
|10 Å/s
|Depends on process parameters. At least up to 2 Å/s. See process log.
|Depends on process parameters. At least up to 2 Å/s. See process log.
|Depends on process parameters.
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|-


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*1x6" wafers
*1x6" wafers
*Smaller pieces/wafers
*Smaller pieces/wafers
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*up to 10x4" wafers or
*up to 10x6" wafers or
* many smaller samples
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|-
|-style="background:LightGrey; color:black"
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Revision as of 10:43, 29 July 2020

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Chromium deposition

Chromium can be deposited by e-beam evaporation and sputter deposition. It should be noted that in e-beam evaporation, chromium does not melt but evaporates directly from the solid phase. In the chart below you can compare the different deposition equipment. Further down you will find the results of some studies on chromium deposition.

E-beam evaporation (Temescal) E-beam evaporation and sputter deposition (Wordentec) E-beam evaporation (Physimeca) Sputter deposition (Lesker sputterer) Sputter deposition ((Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) )
General description E-beam deposition of Chromium E-beam and sputter deposition of Chromium E-beam deposition of Chromium Sputter deposition of Chromium Sputter deposition of Chromium
Pre-clean Ar ion bombardment RF Ar clean RF Ar clean RF Ar clean
Layer thickness 10Å to 1µm* 10Å to 1µm* 10Å to 1000 Å at least up to 200 nm at least up to 200 nm
Deposition rate 0.5 Å/s to 10 Å/s 10 Å/s to 15 Å/s (e-beam)

Sputtering: Depends on process parameters. See here and process log.

10 Å/s Depends on process parameters. At least up to 2 Å/s. See process log. Depends on process parameters.
Batch size
  • 4x6" wafers or
  • 3x8" wafers (ask for holder)
  • Many smaller pieces
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • 1x 2" wafer or
  • 1x 4" wafers or
  • Several smaller pieces
  • 1x6" wafers
  • Smaller pieces/wafers
  • up to 10x4" wafers or
  • up to 10x6" wafers or
  • many smaller samples
Allowed substrates
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
  • III-V materials
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
  • Silicon wafers
  • and almost any other
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • almost any
Comment Takes approx. 20 min to pump down Takes approx. 1 hour to pump down

* For thicknesses above 600 nm, request permission from metal@danchip.dtu.dk to ensure there is enough material.

Studies of Cr deposition processes

Uniformity of Cr layers - Uniformity of Cr layers deposited with different methods and settings

Sputtering of Cr in Wordentec - Settings and deposition rates

Stress in sputtered Cr films - Extremely high tensile stress in Cr films deposited at high temperature