Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride: Difference between revisions
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*Si<sub>3</sub>N<sub>4</sub> | *Si<sub>3</sub>N<sub>4</sub> | ||
*SRN (old nitride furnace, only 4" wafers) | *SRN (only old nitride furnace, only 4" wafers) | ||
Si<sub>3</sub>N<sub>4</sub>: Stoichiometric nitride | Si<sub>3</sub>N<sub>4</sub>: Stoichiometric nitride | ||
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|Film thickness | |Film thickness | ||
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*Si<sub>3</sub>N<sub>4</sub>: ~50 Å - ~ | *Si<sub>3</sub>N<sub>4</sub>: ~50 Å - ~1400 Å | ||
*SRN: ~50 Å - ~ | *SRN: ~50 Å - ~2800 Å | ||
Thicker nitride layers can be deposited over more runs | |||
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*~40 nm - 10 µm | *~40 nm - 10 µm | ||
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|Process temperature | |Process temperature | ||
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*780 <sup>o</sup>C - | *780 <sup>o</sup>C - 845 <sup>o</sup>C | ||
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*300 <sup>o</sup>C | *300 <sup>o</sup>C | ||
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Old nitride furnace: | Old nitride furnace: | ||
*1- | *1-17 4" wafers per run | ||
New nitride furnace: | New nitride furnace: | ||
*1-25 4" or 6" wafers per run | *1-25 4" or 6" wafers per run | ||
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| Substrate materials allowed | | Substrate materials allowed | ||
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*Silicon wafers (new wafers | *Silicon wafers (new wafers or RCA cleaned wafers) | ||
**with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) | **with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) | ||
**from furnaces in stack A or B in cleanroom 2 | **from furnaces in stack A or B in cleanroom 2 | ||
* | *Pure quartz (fused silica) wafers (RCA cleaned) | ||
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*Silicon wafers | *Silicon wafers | ||