Specific Process Knowledge/Wafer cleaning/Post CMP Cleaner: Difference between revisions

Revision as of 08:35, 21 April 2020

Feedback to this page: click here

Post CMP Cleaner)

The post CMP Cleaner is designed for removing slurry residues from polishing wafers. After the Post CMP cleaner is the recommended cleaning tool after using the Polisher CMP.

The user manual, user APV, technical information and contact information can be found in LabManager:

The Post CMP Cleaner in LabManager

Equipment performance and process related parameters

Process parameter range
Equipment		Post CMP Cleaner
Purpose	Cleaning of	Samples from the CMP
	Mechanical Cleaning	Brush Cleaning
	Power	Megasonic Power from 0-40 W (in water)
	Arm sweep	4" and 6" (20x20mm and 2" run with a 4" sweep)
Substrates	Sample size	one 20x20mm piece one 50 mm wafer one 2" wafer one 100 mm wafer one 150 mm wafer
	Allowed materials	Silicon Polysilicon Silicon Oxide Glass/Quartz

@@ Line 35: / Line 35: @@
 *Purpose 3 -->
 |-
-!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
-|style="background:LightGrey; color:black"| 20x20mm substrate
-|style="background:WhiteSmoke; color:black"|
-*Removal rate: 400nm/min
-*Thickness accuracy: +/- ? µm
-*Thickness homogeneity: +/- ? µm
-*Roughness: +/- ? µm
-<!-- |style="background:WhiteSmoke; color:black"|
-*Performance range 1
-*Performance range 2
-*Performance range 3 -->
-|-
-|style="background:LightGrey; color:black"|100mm substrate
-|style="background:WhiteSmoke; color:black"|
-*Removal rate: ~ 60 nm/min
-*Thickness accuracy: ? µm
-*Thickness homogeneity: ? µm
-*Roughness: +/- ? µm
-<!-- |style="background:WhiteSmoke; color:black"|
-*Performance range -->
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameter range