Specific Process Knowledge/Wafer cleaning/Post CMP Cleaner: Difference between revisions

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Rkch (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
271 edits
Line 16: Line 16:
<!-- give the link to the equipment info page in LabManager: -->
<!-- give the link to the equipment info page in LabManager: -->
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=431 The Post CMP Cleaner in LabManager]
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=431 The Post CMP Cleaner in LabManager]
==Equipment performance and process related parameters==
{| border="2" cellspacing="0" cellpadding="2"
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
|style="background:WhiteSmoke; color:black"|<b>Polisher/Lapper</b>
<!-- |style="background:WhiteSmoke; color:black"|<b>Equipment 2</b> -->
|-
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
Polishing of
|style="background:WhiteSmoke; color:black"|
*Silicon
*SiO2
<!-- |style="background:WhiteSmoke; color:black"|
*Purpose 1
*Purpose 2
*Purpose 3 -->
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black"| 20x20mm substrate
|style="background:WhiteSmoke; color:black"|
*Removal rate: 400nm/min
*Thickness accuracy: +/- ? µm
*Thickness homogeneity: +/- ? µm
*Roughness: +/- ? µm
<!-- |style="background:WhiteSmoke; color:black"|
*Performance range 1
*Performance range 2
*Performance range 3 -->
|-
|style="background:LightGrey; color:black"|100mm substrate
|style="background:WhiteSmoke; color:black"|
*Removal rate: ~ 60 nm/min
*Thickness accuracy: ? µm
*Thickness homogeneity: ? µm
*Roughness: +/- ? µm
<!-- |style="background:WhiteSmoke; color:black"|
*Performance range -->
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameter range
|style="background:LightGrey; color:black"|Polishing liquid
|style="background:WhiteSmoke; color:black"|
*SF1 Polishing Fluid
|-
|style="background:LightGrey; color:black"|Polishing cloths
|style="background:WhiteSmoke; color:black"|
*Chemcloth Polishing Cloths
|-
|style="background:LightGrey; color:black"|Rotation
|style="background:WhiteSmoke; color:black"|
*Plate
*Head/Puck
|-
|style="background:LightGrey; color:black"|Arm sweep
|style="background:WhiteSmoke; color:black"|
*Polishing: 20% (inner) - 100% (outer)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Sample size
|style="background:WhiteSmoke; color:black"|
*<nowiki></nowiki> one 20x20mm piece
*one 50 mm wafer
*one 2" wafer
*one 100 mm wafer
*one 150 mm wafer
<!-- |style="background:WhiteSmoke; color:black"|
*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers -->
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
*Silicon
*Glass/Quartz
<!-- |style="background:WhiteSmoke; color:black"|
*Allowed material 1
*Allowed material 2
*Allowed material 3 -->
|-
|}
<br clear="all" />

Revision as of 08:24, 21 April 2020

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Post CMP Cleaner)

The Post CMP CLeaner in cleanroom A-5

The post CMP Cleaner is designed for removing slurry residues from polishing wafers. After the Post CMP cleaner is the recommended cleaning tool after using the Polisher CMP.


The user manual, user APV, technical information and contact information can be found in LabManager:

The Post CMP Cleaner in LabManager

Equipment performance and process related parameters

Equipment Polisher/Lapper
Purpose

Polishing of

  • Silicon
  • SiO2
Performance 20x20mm substrate
  • Removal rate: 400nm/min
  • Thickness accuracy: +/- ? µm
  • Thickness homogeneity: +/- ? µm
  • Roughness: +/- ? µm
100mm substrate
  • Removal rate: ~ 60 nm/min
  • Thickness accuracy: ? µm
  • Thickness homogeneity: ? µm
  • Roughness: +/- ? µm
Process parameter range Polishing liquid
  • SF1 Polishing Fluid
Polishing cloths
  • Chemcloth Polishing Cloths
Rotation
  • Plate
  • Head/Puck
Arm sweep
  • Polishing: 20% (inner) - 100% (outer)
Substrates Sample size
  • one 20x20mm piece
  • one 50 mm wafer
  • one 2" wafer
  • one 100 mm wafer
  • one 150 mm wafer
Allowed materials
  • Silicon
  • Glass/Quartz


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