Specific Process Knowledge/Thin film deposition/Deposition of Germanium: Difference between revisions
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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ||
! Sputtering ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputtering ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
! Sputtering ([[Specific Process Knowledge/Thin film deposition/Cluster- | ! Sputtering ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | ||
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Revision as of 23:19, 8 August 2020
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Deposition of Germanium
Germanium can be deposited by thermal evaporation, e-beam evaporation, and sputtering.
Thermal deposition
Ge deposition equipment comparison
Thermal evaporation (Wordentec) | E-beam evaporation (Physimeca) | E-beam evaporation (Temescal) | Sputtering (Lesker) | Sputtering (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) | |
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General description | Thermal deposition of Ge | E-beam deposition of Ge | E-beam deposition of Ge | Sputter deposition of Ge | Sputter deposition of Ge |
Pre-clean | RF Ar clean | - | Ar ion beam clean | RF Ar clean | RF Ar clean |
Layer thickness | 10Å to about 2000Å (in total distributed on all loaded wafers) | 10Å to about 3000Å | 10Å to about 1000 nm | 10Å to at least 1000 Å | 10Å to ? |
Deposition rate | From 0.4 Å/s up to about ~2Å/s | 5 Å/s | From 1 Å/s up to 5 Å/s | Depends on deposition parameters | Depends on deposition parameters |
Batch size |
Many small pieces |
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smaller pieces |
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Allowed substrates |
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Allowed materials |
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Comment | Recommended for unexposed e-beam resist |