Jump to content

Specific Process Knowledge/Thin film deposition/Deposition of Aluminium: Difference between revisions

Reet (talk | contribs)
m Sputtering of Aluminium: corrected link syntax
Reet (talk | contribs)
Thermal deposition of Aluminium: Added sputter options (old and new lesker were both missing from table)
Line 29: Line 29:
*[[/Thermal deposition of Al|Thermal deposition of Aluminium]]
*[[/Thermal deposition of Al|Thermal deposition of Aluminium]]


==Comparison of Al deposition options==


<br clear="all" />
<br clear="all" />
Line 44: Line 46:
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System (Lesker)]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Cluster-based sputter system]]
)
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]])
Line 56: Line 61:
|
|
E-beam deposition of Aluminium
E-beam deposition of Aluminium
|
Sputter deposition of Aluminium
|
Sputter deposition of Aluminium
|
|
Sputter deposition of Aluminium
Sputter deposition of Aluminium
Line 67: Line 76:
|Ar ion etch
|Ar ion etch
|None
|None
|RF Ar clean
|RF Ar clean
|RF Ar clean  
|RF Ar clean  
|RF Ar clean
|RF Ar clean
Line 77: Line 88:
|10Å to 0.5 µm **
|10Å to 0.5 µm **
|10Å to 1 µm*
|10Å to 1 µm*
|10Å to ~0.5µm
|10Å to ~0.5µm (very time consuming )
|10Å to ~0.5µm (very time consuming )
|10Å to ~0.5µm
|10Å to 0.2 µm*** (this uses all Al in the boat)
|10Å to 0.2 µm*** (this uses all Al in the boat)
|10Å to 1 µm**  
|10Å to 1 µm**  
Line 87: Line 100:
|10Å/s to 15Å/s
|10Å/s to 15Å/s
|Depending on [[/Sputter rates for Al|process parameters]], up to ~2.5 Å/s
|Depending on [[/Sputter rates for Al|process parameters]], up to ~2.5 Å/s
|Depending on process parameters at least up to ~0.5 Å/s
|Depending on process parameters at least up to ~3 Å/s
|~1.5Å/s to 2Å/s
|~1.5Å/s to 2Å/s
|0.5, 1, or 2 Å/s
|0.5, 1, or 2 Å/s
Line 106: Line 121:
*6x4" wafers or
*6x4" wafers or
*6x6" wafers
*6x6" wafers
|
*1x4" wafer or
*1x6" wafer or
several small samples
|
*up to 10x4" wafers or
*up to 10x6" wafers
*or many smaller samples
|
|
*24x2" wafers or  
*24x2" wafers or  
Line 124: Line 147:
|
|
Approx. 1 hour
Approx. 1 hour
|
Approx. 10 min
|
Approx. 5 min plus 6 min transfer time
|
|
Approx. 1 hour
Approx. 1 hour
Line 152: Line 179:
* Quartz wafers  
* Quartz wafers  
* Pyrex wafers  
* Pyrex wafers  
|
* Silicon wafers
* and almost any
|
* Silicon wafers
* And almost any that does not degas. Special carrier for III-V materials.
|
|
* Silicon wafers  
* Silicon wafers  
Line 200: Line 233:
* SU-8  
* SU-8  
* Metals  
* Metals  
 
|
Almost any
|
Almost any - ask!


|
|