Specific Process Knowledge/Characterization/Topographic measurement: Difference between revisions
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*AFMs (AFM Icon-PT1 and AFM Icon-PT2) - ''AFMs for measuring nano structures'' | *AFMs (AFM Icon-PT1 and AFM Icon-PT2) - ''AFMs for measuring nano structures'' | ||
==High Aspect ratio structures== | ==High Aspect ratio structures== | ||
The fact that the stylus tip of a Dektak profilers or an AFM is shaped like a cone with some finite tip angle causes a problem when characterizing high aspect ratio structures. For instance, if a 20 µm wide trench is etched deeper than approximately 18 µm, the tip of the Dektak will not be able to reach the bottom. The optical profiler uses a light beam that is focused through an objective. Therefore it is able to measure higher aspect ratios. The aspect ratio is limited by the possibility for the light to reach the bottom and get back to the detector. On some samples we have been able to measure aspect ratios above 1:10. Otherwise the solution is to cleave the sample along a line that is perpendicular to the trench and then inspect the profile in a [[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|scanning electron microscope]] or a microscope (for large structures). | The fact that the stylus tip of a Dektak profilers or an AFM is shaped like a cone with some finite tip angle causes a problem when characterizing high aspect ratio structures. For instance, if a 20 µm wide trench is etched deeper than approximately 18 µm, the tip of the Dektak will not be able to reach the bottom. The optical profiler uses a light beam that is focused through an objective. Therefore it is able to measure higher aspect ratios. The aspect ratio is limited by the possibility for the light to reach the bottom and get back to the detector. On some samples we have been able to measure aspect ratios above 1:10. Otherwise the solution is to cleave the sample along a line that is perpendicular to the trench and then inspect the profile in a [[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|scanning electron microscope]] or a microscope (for large structures). | ||
== | ==Thin film thickness== | ||
The profilers can be used to measure the thickness of optically transparent thin films or etched non-transparent thin films. There are also other options for measuring film thickness. All the methods are compared on the [[Specific Process Knowledge/Characterization/Measurement of film thickness and optical constants| "Measurement of thin film thickness and optical constants"]] page | |||
==Comparison of stylus profilers, optical profilers and AFMs at Nanolab== | |||
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Revision as of 16:49, 15 April 2020
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Topographic measurements
Topographic measurements are measurements of height differences on your sample. If you measure many spots on the sample you can get a topographic image of the surface.
At DTU Nanolab we have eight systems for topographic measurements:
- Dektak stylus profilers (Dektak XTA, Dektak 8, Dektak 150 and Dektak 3ST) - Profilers for measuring micro structures
- Optical profilers (Optical profiler Sensofar and Optical profiler Filmetrics) - 3D Profilers for measuring micro structures
- AFMs (AFM Icon-PT1 and AFM Icon-PT2) - AFMs for measuring nano structures
High Aspect ratio structures
The fact that the stylus tip of a Dektak profilers or an AFM is shaped like a cone with some finite tip angle causes a problem when characterizing high aspect ratio structures. For instance, if a 20 µm wide trench is etched deeper than approximately 18 µm, the tip of the Dektak will not be able to reach the bottom. The optical profiler uses a light beam that is focused through an objective. Therefore it is able to measure higher aspect ratios. The aspect ratio is limited by the possibility for the light to reach the bottom and get back to the detector. On some samples we have been able to measure aspect ratios above 1:10. Otherwise the solution is to cleave the sample along a line that is perpendicular to the trench and then inspect the profile in a scanning electron microscope or a microscope (for large structures).
Thin film thickness
The profilers can be used to measure the thickness of optically transparent thin films or etched non-transparent thin films. There are also other options for measuring film thickness. All the methods are compared on the "Measurement of thin film thickness and optical constants" page
Comparison of stylus profilers, optical profilers and AFMs at Nanolab
Dektak 8 stylus profiler | Dektak XTA stylus profiler | Optical Profiler (Sensofar) | Optical Profiler (Filmetrics) | AFM Icon 1 and AFM Icon 2 | Dektak 150 stylus profiler | Dektak 3ST stylus profiler | |
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Generel description | Profiler for measuring micro structures. Can do wafer mapping and stress measurements. | Profiler for measuring micro structures. Can do wafer mapping and stress measurements. | 3D Profiler for measuring micro structures and surface roughness. Can do wafer mapping. | 3D Profiler for measuring micro structures and surface roughness. Can do wafer mapping. Positioned in the basement. | AFM for measuring nanostructures and surface roughness | Profiler for measuring micro structures. | Profiler for measuring micro structures. |
Max. scan range xy | Line scan x: 50µm to 200mm | Line scan x: 50µm to 55mm in one scan. Maximum scan lenght with stiching 200mm. | Depending on the objective:
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Only 10x objective: 2.0 mm x 1.7 mm | 90 µm square | Line scan x: 50-55000 µm | Line scan x: 50-50000 µm |
Max. scan range z | 50 Å to 1 mm | 50 Å to 1 mm | Depending on the objective and Z resolution:
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10 mm (piezo range 500 µm) | 1 µm (can go up to 5 µm under special settings) | 50 Å to 1 mm | 100 Å to 130 nm |
Resolution xy | down to 0.067 µm | down to 0.003 µm | Depending on the objective:
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Resolving power og the lense: 0.92 µm | Depending on scan size and number of samples per line and number of lines - accuracy better than 2% | down to 0.003 µm | down to 0.5 µm |
Resolution z | 1 Å, 10 Å, 40 Å or 160 Å depending on range | 1 Å, 10 Å, 40 Å or 160 Å depending on range | Depending on measuring methode:
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<1Å - accuracy better than 2% | 1 Å, 10 Å or 20 Å depending on range | 1 Å, 10 Å, 40 Å or 160 Å depending on range |
Max. scan depth [µm] as a function of trench width W) | 1.2*(W[µm]-5µm) | 1.2*(W[µm]-5µm) | Depending on material and trench width:
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Depending on material and trench width. | ~1:1 with standard cantilever. | 1.2*(W[µm]-5µm) | 1.2*(W[µm]-2.5µm) |
Standard tip radius | 5 µm 45o cone | 5 µm 45o cone | No tip - using light
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No tip - using light
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<12 nm on standard cantilever | 5 µm 45o cone | 2.5 µm 45o cone |
Stress measurement | Can be done | Can be done | No stress calculation capability | Cannot be done | Cannot be done | Cannot be done | Cannot be done |
Surface roughness | Can be done on a line scan | Can be done on a line scan | Can be done on a line or an area | Can be done on a line or an area | Can be done on a selected surface area | Can be done on a line scan | Recommended to use Dektak XTA or Dektak 8. |
Substrate size | up to 8" | up to 6" | Up to more than 6" | 100x100 mm | 6" or less | up to 6" | 4" or less |
Allowed materials |
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Location | Cleanroom F-2 | Cleanroom F-2 | Cleanroom F-2 | Basement, building 346, room 904 | AFM Icon1: Cleanroom C-1
AFM Icon2: Basement, building 346, room 904 |
Basement, building 346, room 904 | Pack-lab, building 347, room 179 |