Specific Process Knowledge/Characterization/Topographic measurement: Difference between revisions
| Line 47: | Line 47: | ||
|Depending on the objective: | |Depending on the objective: | ||
*One view: 127µmX95µm to 1270µmX955µm | *One view: 127µmX95µm to 1270µmX955µm | ||
*Stitching: In principel a hole 6" wafer (time consuming) | |||
|Only 10x objective: | |Only 10x objective: | ||
|90 µm square | |90 µm square | ||
|Line scan x: 50-50000 µm | |Line scan x: 50-50000 µm | ||