Specific Process Knowledge/Thin film deposition/Deposition of Titanium Nitride: Difference between revisions
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== Deposition of Titanium Nitride == | == Deposition of Titanium Nitride == | ||
Thin films of Titanium Nitride (TiN) can be deposited by either [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD]] or [[Specific Process Knowledge/Thin film deposition/Lesker|reactive sputtering]] methods. If sputtering method is used the target is Ti and nitrogen (N<sub>2</sub>) is added as reactive gas to the chamber resulting the formation of Titanium Nitride on the sample. | Thin films of Titanium Nitride (TiN) can be deposited by either [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD]] or [[Specific Process Knowledge/Thin film deposition/Lesker|reactive sputtering]] methods. If sputtering method is used the target is Ti and nitrogen (N<sub>2</sub>) is added as reactive gas to the chamber resulting the formation of Titanium Nitride on the sample. The process information is available below: | ||
*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/TiN deposition using ALD2|TiN deposition using ALD]]. | *[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/TiN deposition using ALD2|TiN deposition using ALD]]. | ||
*[[Specific Process Knowledge/Thin film deposition/Deposition of Titanium Nitride/Deposition of Titanium Nitride using Lesker sputter tool|TiN deposition using reactive sputtering]]. | *[[Specific Process Knowledge/Thin film deposition/Deposition of Titanium Nitride/Deposition of Titanium Nitride using Lesker sputter tool|TiN deposition using reactive sputtering]]. | ||