Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide: Difference between revisions

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 ==Deposition of Titanium Oxide==
-Titanium oxide can be deposited either by a sputter technique or by use of ALD (atomic layer deposition). At the moment the only system where we have a target for Titanium oxide is [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]. The target is Ti. During the sputter deposition oxygen is added to the chamber resulting in Titanium oxide on the sample.
+Titanium oxide can be deposited either by a sputter technique or by use of ALD (atomic layer deposition). In sputter deposition of titanium oxide, the target is Ti and oxygen is added to the chamber during the process resulting in Titanium oxide on the sample. Therefore some process development may be necessary to achieve the correct stoichiometry.
 *[[/IBSD of TiO2|TiO2 made on IBE/IBSD Ionfab300]]