Specific Process Knowledge/Thin film deposition/Deposition of Titanium Nitride: Difference between revisions

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Revision as of 14:47, 6 April 2020

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Deposition of Titanium Nitride

Thin films of Titanium Nitride (TiN) can be deposited by either ALD or reactive sputtering methods.

  • Information about the ALD process can be found here.

If sputtering method is used the target is Ti and nitrogen (N2) is added as reactive gas to the chamber resulting the formation of Titanium Nitride on the sample.

  • Information about the sputtering method can be found here.

Comparison between sputtering and ALD methods for deposition of Titanium Nitride.

ALD2 Sputter System Lesker
Generel description
  • Atomic Layer Deposition
  • Sputtering
Stoichiometry
  • TiN
  • TiN (can be tuned)
Film Thickness
  • 0nm - 50nm
  • 0nm - 200nm
Deposition rate
  • 0.0173 nm/cycle on a flat sample
  • 0.0232 nm/cycle on a high aspect ratio structures
  • up to 0.0625 nm/s on a flat sample
Step coverage
  • Very good
  • Not investigated
Process Temperature
  • 450oC
  • 400oC
Substrate size
  • Several small samples
  • 1-5 50 mm wafers
  • 1-5 100 mm wafers
  • 1-5 150 mm wafer
  • Several small samples
  • 100 mm wafer
  • 150 mm wafer
Allowed materials
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Al, Al2O3
  • Ti, TiO2
  • Other metals (use dedicated carrier wafer)
  • III-V materials (use dedicated carrier wafer)
  • Polymers (depending on the melting point/deposition temperature, use carrier wafer)
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Metals
  • III-V materials (use dedicated carrier wafer)
  • Almost anything that is not toxic.