Specific Process Knowledge/Thin film deposition/Deposition of Titanium Nitride: Difference between revisions
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Revision as of 14:47, 6 April 2020
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Deposition of Titanium Nitride
Thin films of Titanium Nitride (TiN) can be deposited by either ALD or reactive sputtering methods.
- Information about the ALD process can be found here.
If sputtering method is used the target is Ti and nitrogen (N2) is added as reactive gas to the chamber resulting the formation of Titanium Nitride on the sample.
- Information about the sputtering method can be found here.
Comparison between sputtering and ALD methods for deposition of Titanium Nitride.
ALD2 | Sputter System Lesker | |
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Generel description |
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Stoichiometry |
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Film Thickness |
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Deposition rate |
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Step coverage |
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Process Temperature |
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Substrate size |
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Allowed materials |
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