Specific Process Knowledge/Thin film deposition: Difference between revisions
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[[/Deposition of Titanium Nitride|Titanium Nitride]] - ''conductive ceramics'' <br/> | [[/Deposition of Titanium Nitride|Titanium Nitride]] - ''conductive ceramics'' <br/> | ||
[[/Deposition of Aluminium Nitride| Aluminum Nitride (Al<sub>x</sub>N<sub>y</sub>)]]<br/> | [[/Deposition of Aluminium Nitride| Aluminum Nitride (Al<sub>x</sub>N<sub>y</sub>)]]<br/> | ||
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[[/Lesker|AlCu]]<br/> | [[/Lesker|AlCu]]<br/> | ||
[[/Lesker|CoFe]]<br/> | [[/Lesker|CoFe]]<br/> | ||
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[[/Lesker|FeMn]]<br/> | [[/Lesker|FeMn]]<br/> | ||
[[/Lesker|MnIr]]<br/> | [[/Lesker|MnIr]]<br/> | ||
[[/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process information|NbTi]] <br/> | |||
[[/Lesker|NiCo]]<br/> | [[/Lesker|NiCo]]<br/> | ||
[[/Deposition of NiFe|NiFe]]<br/> | [[/Deposition of NiFe|NiFe]]<br/> | ||
[[/Lesker|YSZ (Yttrium stabilized | [[/Deposition of NiV|NiV]] alloy <br/> | ||
[[/Deposition of TiW|TiW]] alloy (10%/90% by weight) <br/> | |||
[[/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process information|BaTiO<sub>3</sub>]] (Barium titanate)<br/> | |||
[[/Lesker|YSZ (Yttrium stabilized zirconia)]]<br/> | |||
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Revision as of 21:00, 21 April 2020
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Choose material to deposit
Dielectrica | Semicondutors | Metals | Nitrides | Alloys | Transparent conductive oxides | Polymers |
Silicon Oxide (SiO2) |
Aluminium
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Silicon Nitride - and oxynitride |
AlCu |
ITO (Tin doped Indium Oxide) |
SU-8 |
Choose deposition equipment
PVD | LPCVD | PECVD | ALD | Coaters | Others
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See the Lithography/Coaters page for coating polymers |
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