Specific Process Knowledge/Etch/Etching of Silicon/Si etch using ASE: Difference between revisions
| Line 176: | Line 176: | ||
*Cycle Time [s]: 3 | *Cycle Time [s]: 3 | ||
*Temperature [Deg. C] 20 | *Temperature [Deg. C] 20 | ||
Results: | |||
*Etch rate of 100nm lines: 146nm/min @etch time: 1:36min. | |||
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Etch cycle | Etch cycle | ||
| Line 192: | Line 194: | ||
*Temperature [Deg. C] -10 | *Temperature [Deg. C] -10 | ||
Results: | Results: | ||
*Etch rate of 100nm lines: | *Etch rate of 100nm lines: 131nm/min @etch time: 1:36min. | ||
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Etch cycle | Etch cycle | ||