Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions
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==PECVD Plasma Enhanced Chemical Vapor Deposition== | ==PECVD Plasma Enhanced Chemical Vapor Deposition== | ||
[[image:Cluster1a.jpg|200x200px|right|thumb|PECVD1 (part of cluster1)]] | |||
[[image:PECVD3a.jpg|200x200px|right|thumb|PECVD3]] | |||
We have three PECVD's here at DANCHIP. They can all be used to deposit Silicon oxides and Silicon nitrides with or without dopants of Boron, Phosphorus and Germanium. PECVD1 and PECVD3 are used for silicon based processing where as PECVD2 is dedicated deposition on III-V materials. PECVD1 is the cleanest system where as PECVD3 is allowed to use with substrates with small abouts of metal on. See the precise rules in the equipment manuals which are uploaded in LabManager. | We have three PECVD's here at DANCHIP. They can all be used to deposit Silicon oxides and Silicon nitrides with or without dopants of Boron, Phosphorus and Germanium. PECVD1 and PECVD3 are used for silicon based processing where as PECVD2 is dedicated deposition on III-V materials. PECVD1 is the cleanest system where as PECVD3 is allowed to use with substrates with small abouts of metal on. See the precise rules in the equipment manuals which are uploaded in LabManager. | ||