Specific Process Knowledge/Back-end processing/LatticeAxe: Difference between revisions
Created page with "==Equipment performance and process related parameters== {| border="2" cellspacing="0" cellpadding="2" !colspan="2" border="none" style="background:silver; color:black;" al..." |
|||
| Line 7: | Line 7: | ||
|- | |- | ||
!style="background:silver; color:black;" align="center" width="60"|Purpose | !style="background:silver; color:black;" align="center" width="60"|Purpose | ||
|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"|Cleaving samples in smaller pieces | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
Revision as of 13:51, 31 March 2020
| Equipment | Wafer scriber | |
|---|---|---|
| Purpose | Cleaving samples in smaller pieces | |
| Performance | Scribe lines | Lines can be made perpendicular to each other by turning chuck 90° |
| Process parameter range | Wafer thickness | Adjustable by increasing or decreasing the load of the diamond pen |
| Distance between scribe lines | Approx. 5 mm | |
| Substrates | Size of Substrate | Up to 100 mm wafers |
| Allowed materials | All but only Si where the scribe lines are made
| |