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Specific Process Knowledge/Lithography: Difference between revisions

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Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
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Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
3,528 edits
Line 102: Line 102:
Throughput is up to 60 wafers/hour.
Throughput is up to 60 wafers/hour.
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Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]:
Depends on dose, Q [µC/cm<sup>2</sup>], beam current, I [A], and pattern area, A [cm<sup>2</sup>]:


t = Q*A/I
t = Q*A/I
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