Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec: Difference between revisions
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= Silicon sputtering in the Wordentec= | |||
Silicon can be sputter deposited in the [[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]] as well as in the [[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]] (details on sputtering Si in the Sputter-System Lesker [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Lesker|here]]) and in the new cluster sputter system (no process details available as of March 2020). | Silicon can be sputter deposited in the [[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]] as well as in the [[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]] (details on sputtering Si in the Sputter-System Lesker [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Lesker|here]]) and in the new cluster sputter system (no process details available as of March 2020). | ||
==Parameters== | |||
Listed below are tried parameters, that can be used during Si deposition in the Wordentec. The process parameters in the table below can be used as started values, run a test process to be sure that you get the right thickness. | Listed below are tried parameters, that can be used during Si deposition in the Wordentec. The process parameters in the table below can be used as started values, run a test process to be sure that you get the right thickness. | ||
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In November 2018 Rebecca Ettlinger and Patama Pholprasit tested Si sputter deposition in the Wordentec at 500 W with a low sputter pressure of 2*10<sup>-3</sup> mbar together with Yannick Seis. The aim was a better uniformity of the sputtered film. See details in the | In November 2018 Rebecca Ettlinger and Patama Pholprasit tested Si sputter deposition in the Wordentec at '''500 W with a low sputter pressure of 2*10<sup>-3</sup> mbar''' together with Yannick Seis. The aim was a better uniformity of the sputtered film. See details in the [http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&machid=167 Wordentec Process log]. | ||
It is thus possible to use a higher power together with a lower pressure, but please do not do this without consulting the [[mailto:thinfilm@nanolab.dtu.dk Thin Film group]]. | |||