Specific Process Knowledge/Etch/III-V ICP: Difference between revisions
Appearance
| Line 102: | Line 102: | ||
== Additional information == | == Additional information == | ||
''' | === Endpoint detection === | ||
The III-V ICP is equipped with two endpoint detection systems - an optical endpoint detection system and a laser interferometric system. Click [[Specific Process Knowledge/Etch/OES |'''here''']] to access the page common to all dry etch tools that are equipped with an optical endpoint detection system. | |||
=== Wafer bonding === | |||
To find information on how to bond wafers or chips to a carrier wafer, click [[Specific Process Knowledge/Etch/DryEtchProcessing/Bonding| here]]. | To find information on how to bond wafers or chips to a carrier wafer, click [[Specific Process Knowledge/Etch/DryEtchProcessing/Bonding| here]]. | ||