Revision as of 13:25, 24 March 2020

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Deposition of NiFe alloy

NiFe has been deposited in the Sputter System (Lesker) here at Nanolab. Below you will find some results of varying the deposition parameters. You can find more information on the process parameters used by others in the Process Log in LabManager.

Film quality optimization

By Bjarke Thomas Dalslet @Nanotech.dtu.dk

The Lesker CMS 18 sputter system can produce films in a wide range of qualities. The quality of a film depends strongly on the substrate (lattice matching), but also on the energy the sputtered material can utilize for annealing.

Strain estimations was done on 30 nm Ni $_{81}$ Fe $_{19}$ thin films using low angle x-ray diffraction, for various substrates. It was found that the strain of the film influenced the resistance (R) and anisotropic magneto resistance (AMR) of the films (this relationship is also documented in literature); A Ta interface layer reduced R and increased AMR on both Si and SiO $_{2}$ substrates while reducing strain.

This study was then done on 30 nm Ni $_{81}$ Fe $_{19}$ thin films deposited on 3 nm Ta on top of a SiO $_{2}$ substrate, using R and AMR as an indication of strain. As seen in the tables, applying a substrate bias increases AMR and conductance (1/R). An equivalent effect is seen when heating the substrate during deposition. This heating can also be done after deposition without loosing the effect.

Name	Substrate bias (W)	AMR	1/R (S)	Crystal strain
0029 NiFe3_stack_RF20	20	0.02724278	1.308044474
0018_NiFe1_stack_RF	10	0.025850358	0.898311175
0030 NiFe3_stack	0	0.020103598	0.71772052	0.8

Name	Temperature (C)	AMR	1/R (S)	Crystal strain
0030 NiFe3_stack	25	0.020103598	0.71772052	0.8
BDT-NiFe1-blank30	200	0.019319002	1.095770327
BTD-NiFe-Blank22	250	0.021768497	1.047668937
BTD-NiFe-Blank14	300	0.02983617	1.724137931
BTD-NiFe-Blank13	350	0.033944331	1.887504719
BTD-NiFe-Blank15	400	0.031176801	1.655903295	0.2
BTD-NiFe-Blank16	450	0.030843457

Stress in films deposited at high temperature

In 2017, Radu Malureanu measured a tensile stress of about 100 MPa on thin films of Invar deposited at 600 °C. Read more about stress in thin films deposited with the Lesker sputter system here.

@@ Line 1: / Line 1: @@
 '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_NiFe click here]'''
-==Deposition of Nickel Iron alloy==
+=Deposition of NiFe alloy=
+NiFe has been deposited in the [[Specific_Process_Knowledge/Thin_film_deposition/Lesker|Sputter System (Lesker)]] here at Nanolab. Below you will find some results of varying the deposition parameters. You can find more information on the process parameters used by others in the [http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&machid=244 Process Log] in LabManager.
-Nickel Iron alloy, e.g., Invar, has been sputter deposited in the [[Specific_Process_Knowledge/Thin_film_deposition/Lesker|Sputter-system (Lesker)]] here at Nanolab.
+==Film quality optimization==
+''By Bjarke Thomas Dalslet @Nanotech.dtu.dk''
-You will find detailed results of varying the process parameters when sputtering Ni-Fe in the Lesker sputter system [[/Sputtering of NiFe in the Lesker sputter system|here]].
+The Lesker CMS 18 sputter system can produce films in a wide range of qualities. The quality of a film depends strongly on the substrate (lattice matching), but also on the energy the sputtered material can utilize for annealing.
+Strain estimations was done on 30 nm Ni<math>_{81}</math>Fe<math>_{19}</math> thin films using low angle x-ray diffraction, for various substrates. It was found that the strain of the film influenced the resistance (R) and anisotropic magneto resistance (AMR) of the films (this relationship is also documented in literature); A Ta interface layer reduced R and increased AMR on both Si and SiO<math>_2</math> substrates while reducing strain.
+This study was then done on 30 nm Ni<math>_{81}</math>Fe<math>_{19}</math> thin films deposited on 3 nm Ta on top of a SiO<math>_2</math> substrate, using R and AMR as an indication of strain. As seen in the tables, applying a substrate bias increases AMR and conductance (1/R). An equivalent effect is seen when heating the substrate during deposition. This heating can also be done after deposition without loosing the effect.
+{| {{table}} border="1" cellspacing="0" cellpadding="8"
+| align="center" style="background:#f0f0f0;"|'''Name'''
+| align="center" style="background:#f0f0f0;"|'''Substrate bias (W)'''
+| align="center" style="background:#f0f0f0;"|'''AMR'''
+| align="center" style="background:#f0f0f0;"|'''1/R (S)'''
+| align="center" style="background:#f0f0f0;"|'''Crystal strain'''
+|-
+| 0029 NiFe3_stack_RF20||20||0.02724278||1.308044474||
+|-
+| 0018_NiFe1_stack_RF||10||0.025850358||0.898311175||
+|-
+| 0030 NiFe3_stack||0||0.020103598||0.71772052||0.8
+|-
+|}
+{| {{table}} border="1" cellspacing="0" cellpadding="8"
+| align="center" style="background:#f0f0f0;"|'''Name'''
+| align="center" style="background:#f0f0f0;"|'''Temperature (C)'''
+| align="center" style="background:#f0f0f0;"|'''AMR'''
+| align="center" style="background:#f0f0f0;"|'''1/R (S)'''
+| align="center" style="background:#f0f0f0;"|'''Crystal strain'''
+|-
+| 0030 NiFe3_stack||25||0.020103598||0.71772052||0.8
+|-
+| BDT-NiFe1-blank30||200||0.019319002||1.095770327||
+|-
+| BTD-NiFe-Blank22||250||0.021768497||1.047668937||
+|-
+| BTD-NiFe-Blank14||300||0.02983617||1.724137931||
+|-
+| BTD-NiFe-Blank13||350||0.033944331||1.887504719||
+|-
+| BTD-NiFe-Blank15||400||0.031176801||1.655903295||0.2
+|-
+| BTD-NiFe-Blank16||450||0.030843457||||
+|-
+|
+|}
+==Stress in films deposited at high temperature==
+In 2017, Radu Malureanu measured a tensile stress of about 100 MPa on thin films of Invar deposited at 600 °C. Read more about stress in thin films deposited with the Lesker sputter system [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system here].