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Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system: Difference between revisions

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== Sputter-System Metal-Oxide(PC3) ==
== Sputter-System Metal-Oxide(PC3) ==


The purpose of the sputter is to deposit magnetic metals and dielectrica on a single 4" or 6" wafer at a time.
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It can be a problem to take wafers from the sputter and into the other machines in the cleanroom, since it is not very clean. In principle the sputter should be the last step before you take your wafers out of the cleanroom. If you need to take process your wafers further please contact the Thin Film group so they can help you.
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Lift-off of magnetic materials should never be done in the normal lift-off bath in RR4. It should always be done in the dedicated lift-off bath in the fumehood next to the sputter.


<gallery caption="Deposition rates of HfO2 at different temperaturs. ALD window." widths="600px" heights="300px" perrow="2">
image:PC3_photo.png| Deposition rate of HfO<sub>2</sub> at 150 <sup>o</sup>C. Substrate: Silicon 6" wafer with native oxide.
image:PC3_during_sputtering.png| Deposition rate of HfO<sub>2</sub> at 150 <sup>o</sup>C. Substrate: Silicon 6" wafer with native oxide.
</gallery>


==Distribution chamber (Genmark robot)==
==Distribution chamber (Genmark robot)==
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