Specific Process Knowledge/Thin film deposition/Deposition of Tantalum: Difference between revisions
No edit summary |
No edit summary |
||
| Line 5: | Line 5: | ||
! | ! | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]]) | ||
! Sputter (Lesker) | ! Sputter (Lesker) | ||
|- | |- | ||
| Line 12: | Line 11: | ||
*Up to 1x4" wafers | *Up to 1x4" wafers | ||
*smaller pieces | *smaller pieces | ||
| | | | ||
*up to 1x6" wafer | *up to 1x6" wafer | ||
| Line 20: | Line 16: | ||
| Pre-clean | | Pre-clean | ||
|RF Ar clean | |RF Ar clean | ||
|RF Ar clean | |RF Ar clean | ||
|- | |- | ||
| Layer thickness | | Layer thickness | ||
|10Å to 1µm | |10Å to 1µm | ||
|10Å to | |10Å to | ||
|- | |- | ||
| Deposition rate | | Deposition rate | ||
|2Å/s to 15Å/s | |2Å/s to 15Å/s | ||
|~0.3Å/s | |~0.3Å/s | ||
|- | |- | ||
|} | |} | ||
Revision as of 14:41, 15 August 2011
Tantalum can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.
| E-beam evaporation (Alcatel) | Sputter (Lesker) | |
|---|---|---|
| Batch size |
|
|
| Pre-clean | RF Ar clean | RF Ar clean |
| Layer thickness | 10Å to 1µm | 10Å to |
| Deposition rate | 2Å/s to 15Å/s | ~0.3Å/s |