Specific Process Knowledge/Etch/DRIE-Pegasus/DREM/DREM 3kW 100% b: Difference between revisions

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Revision as of 10:28, 9 August 2022


Date Substrate Information Process Information Results
Wafer info Material/ Exposed area Condi- tioning Recipe Wafer ID Comments SEM images Picoscope Numbers
29/11-2019 Medusa One Si / 10% stab-19 chamber clean 20 nanolab/ jmli /DREM 3.0 kW 100% b S018653 Process log entry

SEM image: a000 a001 a002 a003 a004 a005 a006 a007 a008 a009 a010 a011 a012 a013
Trench width (um) 159.77 401.82 251.88 250.36 158.96 99.72 61.82 40.77 32.13 25.67 12.84 7.24 4.13 2.6
Etched depth (um) 145.56 145.42 145.8 147.62 146.52 142.74 136.64 128.65 123.88 118.18 100.34 84.65 69.04 60.36
Etch rate (um/min) 14.56 14.54 14.58 14.76 14.65 14.27 13.66 12.86 12.39 11.82 10.03 8.46 6.9 6.04
Etch rate (nm/cyc) 1.21 1.21 1.21 1.23 1.22 1.19 1.14 1.07 1.03 0.98 0.84 0.71 0.58 0.5
Sidewall bowing (%) -0.28 -0.51 -0.38 -0.38 -0.4 0.05 0.18 -0.14 0.09 0.19 0.36 0.45 0.52 0.53
Sidewall angle (degs) 92.65 93.1 92.66 93.02 92.84 92.17 92.04 91.86 91.92 91.7 91.52 91.05 90.71 90.61
Bottom bowing (%) 8.1 3.9 6.18 6.71 9.14 10.53 14.26 17.43 16 16.76 15.69 16.18 14.53 11.69
Aspect ratio 0.87 0.35 0.56 0.57 0.88 1.36 2.05 2.86 3.41 4.05 6.47 9.64 13.86 18.56