Specific Process Knowledge/Lithography: Difference between revisions
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Throughput is up to 60 wafers/hour. | Throughput is up to 60 wafers/hour. | ||
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Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: | Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: | ||
t = Q*A/I | |||
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Process depended, depends also on heating and cooling temperature rates | Process depended, depends also on heating and cooling temperature rates | ||