Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec: Difference between revisions
Appearance
| Line 3: | Line 3: | ||
== Silicon sputtering in the Wordentec== | == Silicon sputtering in the Wordentec== | ||
Silicon can be sputter deposited in the [[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]] as well as in the Lesker sputter | Silicon can be sputter deposited in the [[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]] as well as in the [[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]] (details on sputtering Si in the Sputter-System Lesker [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Lesker|here]]) and in the new cluster sputter system (no process details available as of March 2020). | ||
'''Parameters''' | '''Parameters''' | ||
Listed below are tried parameters, that can be used during deposition. The process parameters in the table below can be used as started values, run a test process to be sure that you get the right thickness. | Listed below are tried parameters, that can be used during Si deposition in the Wordentec. The process parameters in the table below can be used as started values, run a test process to be sure that you get the right thickness. | ||
'''Do not use the power more than 180 W without consulting staff''', since the Si target could break into a lot of small pieces. | '''Do not use the power more than 180 W without consulting staff''', since the Si target could break into a lot of small pieces. | ||