Jump to content

Specific Process Knowledge/Thin film deposition/Deposition of TiW/Sputtering of TiW in Wordentec/Grain size and uniformity of TiW layers: Difference between revisions

← Older editNewer edit →
VisualWikitext
Reet (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
1,736 edits
Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,346 edits
No edit summary
Line 8: Line 8:




'''Power 150 W, pressure 1*10<sup>-3</sup> mbar'''  
'''Power: 150 W, pressure: 1*10<sup>-3</sup> mbar'''  


With use of the settings 150W and 1*10<sup>-3</sup> mbar, a surface with low roughness is deposited.  
With use of the settings 150W and 1*10<sup>-3</sup> mbar, a surface with low roughness is deposited.  
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_TiW/Sputtering_of_TiW_in_Wordentec/Grain_size_and_uniformity_of_TiW_layers"