Specific Process Knowledge/Characterization/Lifetime scanner MDPmap: Difference between revisions
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*405 nm | *405 nm | ||
**Power 5 mW to 100 mW | **Power 5 mW to 100 mW | ||
* | *977 nm | ||
**Power 5 mW to | **Power 5 mW to 190 mW | ||
*975 nm | *975 nm | ||
**Power 0.5 W to 4.0 W | **Power 0.5 W to 4.0 W | ||
*977 nm | |||
**Power up to 200 µW | |||
*Spot diameter for all laser 0.5 µm | *Spot diameter for all laser 0.5 µm | ||
|- | |- |
Revision as of 21:25, 18 March 2020
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Microwave Detected Photoconductivity (MDP)
Topographic visualisation of electrically active defects or materiel properties at almost any production stage, allows for process optimization and performance prediction of devices.
MDP is a contact less, non destructive measurement technology for the electrical characterization of a large variety of semiconductors. The mapping and visualization of so far not detectable defects was achieved by improving the sensitivity of a microwave detection system by several orders of magnitude. Electrical properties such as lifetime, τ, mobility, μ, and diffusion length, L, can be measured also at very low injection levels with a spatial resolution limited only by the diffusion length of the charge carriers.
The user manual, the APV and contact information can be found in LabManager:
Lifetime scanner MPDmap info page in LabManager,
Performance information
Equipment | Lifetime scanner MDPmap | |
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Purpose |
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Location |
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Instrument specifics | Detector |
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Laser |
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Substrates | Size |
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Allowed materials |
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