Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace: Difference between revisions
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Thermal oxidation: | Thermal oxidation: | ||
*Dry oxidation using O<sub>2</sub> | *Dry oxidation using O<sub>2</sub> | ||
*Wet oxidation using H<sub>2</sub>O vapour | *Wet oxidation using H<sub>2</sub>O vapour | ||
Boron pre-deposition/doping: | Boron pre-deposition/doping: | ||
*Boron-nitride wafers are used as doping source. This is a solid doping source containing B<sub>2</sub>O<sub>3</sub> | *Boron-nitride wafers are used as doping source. This is a solid doping source containing B<sub>2</sub>O<sub>3</sub> | ||
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|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"| | |style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"| | ||
*Dry oxide: ~ 0 nm - 300 nm (it takes too long to grow a thicker oxide) | *Dry oxide: ~ 0 nm - 300 nm (it takes too long to grow a thicker oxide) | ||
*Wet oxide: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C) | *Wet oxide: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C for Si[100] wafers) | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||