Specific Process Knowledge/Thin film deposition/Deposition of Gold: Difference between revisions

← Older edit Newer edit →

VisualWikitext

@@ Line 2: / Line 2: @@
 '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Gold click here]'''
-Gold can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment. We also describe adhesion layers for gold deposition and the roughness of gold deposited in the Wordentec.
+Gold can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment. We also describe the temperature rise on the wafer during gold deposition, the adhesion layers that can be used for gold deposition, and the roughness of gold deposited in the Wordentec.
 == Au deposition ==
@@ Line 14: / Line 14: @@
 ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
 ! Sputter ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
+! Sputter ([[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process_information|Cluster-based sputter system]])
 ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
 ! Sputter coater [[Specific Process Knowledge/Thin film deposition/Sputter coater#Sputter coater 03|(Sputter coater 03)]]
@@ Line 21: / Line 22: @@
 | E-beam deposition of Au
 | E-beam deposition of Au
+| Sputter deposition of Au
 | Sputter deposition of Au
 | E-beam deposition of Au
@@ Line 31: / Line 33: @@
 |RF Ar clean
 |RF Ar clean
+|RF Ar clean
 |
 |
@@ Line 38: / Line 40: @@
 ! Layer thickness
 |10 Å to 1 µm*
-|10 Å to 5000 Å*
+|10 Å to 5000 Å
-|10 Å to
+|10 Å to 5000 Å
+|10 Å to 5000 Å
 |10 Å to about 3000 Å**
 |
@@ Line 47: / Line 50: @@
 |-style="background:LightGrey; color:black"
 ! Deposition rate
-|0.5 Å/s to 10 Å/s
+|0.5-10 Å/s
-|1 Å/s to 10 Å/s
+|1-10 Å/s
-|
+|Depends on process parameters, 3-10 Å/s based on process log
-|From 5 Å/s up to 10Å/s
+|Depends on process parameters
+|5-10 Å/s
 |Not measured
 |Not measured
@@ Line 70: / Line 74: @@
 *1x4" wafer or
 *1x6" wafer
+|
+*Up to 10x6" wafers or
+*Up to 10x4" wafers
+Many small pieces
 |
 *1x 2" wafer or
@@ Line 114: / Line 122: @@
 * Metals
 * Carbon
+|
+* Almost any as long as it does not outgas if you plan to use sample heating - see cross-contamination sheets in Labmanager
 |
 * III-V materials
@@ Line 130: / Line 140: @@
 * Takes approx. 20 min to pump down.
 |
-* For thicknesses above 600 nm permission is required
 * Takes approx. 1 hour to pump down.
 |
+*Takes approx. 10 minutes to load and transfer sample
+|
+* Takes approx. 12 minutes to load and transfer samples
 |
 * For thicknesses above 200 nm permission is required