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Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace: Difference between revisions

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==Overview of the performance of the Boron Drive-in + Pre-dep furnace and some process related parameters==
==Overview of the performance of the Boron Drive-in and Pre-dep furnace and some process related parameters==


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!style="background:silver; color:black;" align="center"|Purpose  
!style="background:silver; color:black;" align="center"|Purpose  
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*Drive-in of boron
*Thermal oxidation of Si wafers
*Oxidation of silicon
*Boron pre-deposition/doping of Si wafers
*Oxidation of boron phase layers
*Oxidation of boron phase layers  
*Annealing of the oxide
*Driving-in pre-deposited or ion-implanted boron
*Boron pre-depostion using source wafer
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Annealing:
Thermal oxidation:
*Using N<sub>2</sub>
Oxidation:
*Dry oxidation using O<sub>2</sub>
*Dry oxidation using O<sub>2</sub>
*Wet oxidation using H<sub>2</sub>O generated by a torch
*Wet oxidation using H<sub>2</sub>O vapour generated by a torch
Boron pre-deposition/doping:
*Boron-nitride wafers are used as doping source. This is a solid doping source containing B<sub>2</sub>O<sub>3</sub> 
Driving-in pre-deposited or ion-implanted boron
*Dry or wet oxidation recipes are normally used for this purpose
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!style="background:silver; color:black" align="center"|Performance
!style="background:silver; color:black" align="center"|Performance
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
*Dry oxide: 50 Å  to ~2000 Å (it takes too long to grow a thicker oxide)
*Dry oxide: ~ 0 nm - 300 nm (it takes too long to grow a thicker oxide)
*Wet oxide: 50 Å to ~3 µm (it takes too long to grow a thicker oxide)
*Wet oxide: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C)
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
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|style="background:LightGrey; color:black"|Process pressure
|style="background:LightGrey; color:black"|Process pressure
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*1 atm
*1 atm (no vacuum)
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|style="background:LightGrey; color:black"|Gasses on the system
|style="background:LightGrey; color:black"|Gasses on the system
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*N<sub>2</sub>
*O<sub>2</sub>, N<sub>2</sub> and H<sub>2</sub>
*O<sub>2</sub>
*H<sub>2</sub> (in a torch, H<sub>2</sub> and O<sub>2</sub> burns into water vapour for wet oxidation)
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
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*Silicon wafers (RCA cleaned)
*Silicon wafers (RCA cleaned)
*Boron-nitride source wafers for boron pre-deposition/doping
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