Specific Process Knowledge/Etch/DRIE-Pegasus/picoscope: Difference between revisions
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Above, one can see the multiplexing of the Bosch process by alternation of the gas flows of | Above, one can see the multiplexing of the Bosch process by alternation of the gas flows of | ||
<span style="color:#FFFFFF; background:blue">SF<sub>6</sub></span> (that has flow initially at 350 sccm in the break for the first 1.5 second then 550 sccm for 5.5 seconds in the main etch phase) and <span style="background:red">C<sub>4</sub>F<sub>8</sub></span> (at 200 sccm in the dep phase) according to the process recipe table above. Below, the <span style="background:lime">Pressure</span> alternates between 25 mtorr (dep and break) and 150 mtorr (main). The <span style="background:yellow">Platen Electrode DC Bias</span> (the electrostatic potential difference between the plasma and the wafer electrode that drives the ion bombardment in the etch process) is generated by the <span style="color:#FFFFFF; background:purple">Platen Power</span> at 140 W in the break and 45 W in the main etch. Below this, the [[Specific Process Knowledge/Etch/DRIE-Pegasus/System-description#RF_matching_in_general|<span style="background:silver">Reflected Platen Power</span>]] is not zero. The <span style="background:aqua">Coil Power</span> is 2800 W (etch) and 2000W (dep) | <span style="color:#FFFFFF; background:blue">SF<sub>6</sub></span> (that has flow initially at 350 sccm in the break for the first 1.5 second then 550 sccm for 5.5 seconds in the main etch phase) and <span style="background:red">C<sub>4</sub>F<sub>8</sub></span> (at 200 sccm in the dep phase) according to the process recipe table above. Below, the <span style="background:lime">Pressure</span> alternates between 25 mtorr (dep and break) and 150 mtorr (main). The <span style="background:yellow">Platen Electrode DC Bias</span> (the electrostatic potential difference between the plasma and the wafer electrode that drives the ion bombardment in the etch process) is generated by the <span style="color:#FFFFFF; background:purple">Platen Power</span> at 140 W in the break and 45 W in the main etch. Below this, the [[Specific Process Knowledge/Etch/DRIE-Pegasus/System-description#RF_matching_in_general|<span style="background:silver">Reflected Platen Power</span>]] is not zero. The <span style="background:aqua">Coil Power</span> is 2800 W (etch) and 2000W (dep) with the | ||
[[Specific Process Knowledge/Etch/DRIE-Pegasus/System-description#RF_matching_in_general|<span style="background:fuchsia">Reflected Coil Power</span>]] below. | |||
<span style="background:fuchsia">Reflected Coil Power</span> | |||