Specific Process Knowledge/Etch/DRIE-Pegasus/picoscope: Difference between revisions
| Line 51: | Line 51: | ||
</gallery> | </gallery> | ||
Above, one can see the multiplexing of the Bosch process by alternation of the gas flows of | Above, one can see the multiplexing of the Bosch process by alternation of the gas flows of | ||
<span style="color:#FFFFFF; background:blue">SF<sub>6</sub></span> (that has flow initially at 350 sccm in the break for the first 1.5 second then 550 sccm for 5.5 seconds in the main etch phase) and <span style="background:red">C<sub>4</sub>F<sub>8</sub></span> (at 200 sccm in the dep phase) according to the process recipe table above. Below, the <span style="background:lime">pressure</span> alternates between 25 mtorr (dep and break) and 150 mtorr (main). The <span style="background:yellow">Platen Electrode DC Bias</span> (the electrostatic potential difference between the plasma and the wafer electrode that drives the ion bombardment in the etch process) is generated by the <span style="color:#FFFFFF; background:purple">Platen Power</span> at 140 W in the break and 45 W in the main etch. | <span style="color:#FFFFFF; background:blue">SF<sub>6</sub></span> (that has flow initially at 350 sccm in the break for the first 1.5 second then 550 sccm for 5.5 seconds in the main etch phase) and <span style="background:red">C<sub>4</sub>F<sub>8</sub></span> (at 200 sccm in the dep phase) according to the process recipe table above. Below, the <span style="background:lime">pressure</span> alternates between 25 mtorr (dep and break) and 150 mtorr (main). The <span style="background:yellow">Platen Electrode DC Bias</span> (the electrostatic potential difference between the plasma and the wafer electrode that drives the ion bombardment in the etch process) is generated by the <span style="color:#FFFFFF; background:purple">Platen Power</span> at 140 W in the break and 45 W in the main etch. The | ||
[[Specific Process Knowledge/Etch/DRIE-Pegasus/System-description#Why_RF_matching_is_extremely_important_in_the_Bosch_process|Reflected Platen Power ]] | |||
Specific_Process_Knowledge/Etch/DRIE-Pegasus/System-description#Why_RF_matching_is_extremely_important_in_the_Bosch_process | Specific_Process_Knowledge/Etch/DRIE-Pegasus/System-description#Why_RF_matching_is_extremely_important_in_the_Bosch_process | ||