Specific Process Knowledge/Etch/DRIE-Pegasus/picoscope: Difference between revisions

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! Gas flow (sccm)  
! Gas flow (sccm)  
| SF<sub>6</sub> 350 (1.5 s) 550
| SF<sub>6</sub> 350 (1.5 s), 550
| C<sub>4</sub>F<sub>8</sub> 200
| C<sub>4</sub>F<sub>8</sub> 200
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! Pressure (mtorr)  
! Pressure (mtorr)  
| 25 (1.5 s) 150
| 25 (1.5 s), 150
| 25
| 25
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| 140 (1.5) 45
| 140 (1.5) 45
| 0  
| 0  
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! Cycles 
| colspan="2" | 44 (vary this)
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! Common  
! Common  
| colspan="2" | Temperature 20 degs, HBC 10 torr, Short funnel, with baffle & 5mm spacers
| colspan="2" | Temperature 20 degs
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Revision as of 12:11, 17 March 2020

Process optimization using the Picoscope

The original standard recipes on Pegasus 1 differ in many ways. The second step of one of them is listed below:

Process A Step 2 parameters
Parameter Etch Dep
Gas flow (sccm) SF6 350 (1.5 s), 550 C4F8 200
Cycle time (secs) 7.0 4.0
Pressure (mtorr) 25 (1.5 s), 150 25
Coil power (W) 2800 2000
Platen power (W) 140 (1.5) 45 0
Common Temperature 20 degs


4 cycles of the recipe PrD4 recorded with the Picoscope
4 cycles of the recipe PrD4 recorded with the SPTS software
4 cycles of the recipe Prcocess A recorded with the Picoscope
4 cycles of the recipe PrD4 recorded with the SPTS software